zxtn25100bfh document number: ds33703 rev. 2 - 2 1 of 7 www.diodes.com december 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25100bfh 100v npn low saturation transistor in sot23 features ? bv ceo > 100v ? bv cex > 170v forward blocking voltage ? bv eco > 6v reverse blocking voltage ? i c = 3a high continuous collector current ? low saturation voltage, v ce(sat) < 80mv @1a ? r ce(sat) = 67m ? for a low equivalent on-resistance ? 1.25w power dissipation ? h fe specified up to 3a for high current gain hold up ? complementary pnp type: zxtp25100bfh ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound ? ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin plated leads, solderable per mil-std-202, method 208 ? weight 0.008 grams (approximate) applications ? lamp relay and solenoid drivers ? general switching in automot ive and industrial applications ? motor drive and control ordering information (note 4) product marking reel size (inches) tape width (mm) quantity per reel ZXTN25100BFHTA 021 7 8 3,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information 021 = product type marking code sot23 top view pin-out top view device symbol c e b c e b 021
zxtn25100bfh document number: ds33703 rev. 2 - 2 2 of 7 www.diodes.com december 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25100bfh maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo 170 v collector-emitter voltage (forward blocking) v cex 170 v collector-emitter voltage v ceo 100 v emitter-base voltage (reverse blocking) v eco 6 v emitter-base voltage v ebo 7 v continuous collector current i c 3 a peak pulse current (note 5) i cm 9 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (note 5) p d 0.73 5.84 mw power dissipation linear derating factor (note 6) p d 1.05 8.4 mw power dissipation linear derating factor (note 7) p d 1.25 9.6 mw power dissipation linear derating factor (note 8) p d 1.81 14.5 mw thermal resistance, junction to ambient (note 5) r ja 171 c/w thermal resistance, junction to ambient (note 6) r ja 119 c/w thermal resistance, junction to ambient (note 7) r ja 100 c/w thermal resistance, junction to ambient (note 8) r ja 69 c/w thermal resistance, junction to leads (note 9) r jl 74.96 c/w operating and storage temperature range t j, t stg -55 to +150 c esd ratings (note 10) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 8,000 v 3b electrostatic discharge - machine model esd mm 400 v c notes: 5. for a device surface mounted on 15mm x 15mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still a ir conditions; the device is measured when operating in a steady-state condition. 6. same as note (5), except mounted on 25m m x 25mm x 1.6mm fr4 pcb with 2 oz copper. 7. same as note (5), except mounted on 50m m x 50mm x 1.6mm fr4 pcb with 2 oz copper. 8. same as note (7), except measured at t < 5secs. 9. thermal resistance from junction to so lder-point (at the end of collector lead). 10.refer to jedec specification jesd22-a114 and jesd22-a115.
zxtn25100bfh document number: ds33703 rev. 2 - 2 3 of 7 www.diodes.com december 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25100bfh thermal characteristics and derating information 0 20 40 60 80 100 120 140 160 180 1 10 100 100m 1 10 100 10m 100m 1 10 safe operating area 50mm x 50mm x 1.6mm fr4 2oz cu single pulse t amb =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25mm x 25mm x 1.6mm fr4 2oz cu 15mm x 15mm x 1.6mm fr4 1oz cu derating curve temperature (c) max power dissipation (w) 50mm x 50mm x 1.6mm fr4 2oz cu 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 t amb =25c 50mm x 50mm x 1.6mm fr4 2oz cu transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c 50mm x 50mm x 1.6mm fr4 2oz cu pulse power dissipation pulse width (s) maximum power (w) bv (br)cev =170v bv (br)ceo =100v failure may occur in this region t amb =25c v ce collector-emitter voltage (v) i c collector current (a)
zxtn25100bfh document number: ds33703 rev. 2 - 2 4 of 7 www.diodes.com december 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25100bfh electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 170 220 - v i c = 100a collector-emitter breakdown voltage (forward blocking) (note 11) bv cex 170 210 - v i c = 100a, r be < 1k or -1v < v be < 0.25v collector-emitter breakdown voltage (note 11) bv ceo 100 120 - v i c = 1ma emitter-collector breakdown voltage (reverse blocking) (note 11) bv ecx 6 7 - v i e = 100a, r bc < 1k or 0.25v > v bc > -0.25v emitter-collector breakdown voltage bv eco 6 8.4 - v i e = 100a emitter-base breakdown voltage bv ebo 7 8 - v i e = 100a collector cut-off current i cbo - <1 50 20 na v cb = 136v v cb = 136v, t a = +100c collector emitter cut-off current i cex - - 100 na v ce = 136v, r be < 1k or -1v < v be < 0.25v emitter cut-off current i ebo - <1 50 na v eb = 5.6v static forward current transfer ratio (note 11) h fe 100 50 - 200 85 20 300 - - - i c = 10ma, v ce = 2v i c = 1a, v ce = 2v i c = 3a, v ce = 2v collector-emitter saturation voltage (note 11) v ce(sat) - - - - 40 100 70 200 55 135 80 250 mv i c = 0.5a, i b = 50ma i c = 0.5a, i b = 10ma i c = 1a, i b = 100ma i c = 3a, i b = 300ma base-emitter saturation voltage (note 11) v be ( sat ) - 940 1050 mv i c = 3a, i b = 300ma base-emitter saturation voltage (note 11) v be ( on ) - 890 1000 mv i c = 3a, v ce = 2v transition frequency f t - 160 - mhz i c = 100ma, v ce = 5v, f = 100mhz collector output capacitance c obo - 9.4 20 pf v cb = 10v, f = 1mhz delay time t ( d ) - 16 - ns v cc = 10v, i c = 0.5a, i b1 = -i b2 = 50ma rise time t ( r ) - 55 - ns storage time t ( s ) - 677 - ns fall time t ( f ) - 95 - ns notes: 11. measured under pulsed conditions. pulse width 300s. duty cycle 2%
zxtn25100bfh document number: ds33703 rev. 2 - 2 5 of 7 www.diodes.com december 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25100bfh typical electrical characteristics (@t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10 10m 100m 1 10m 100m 1 0.0 0.1 0.2 0.3 0.4 0.5 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 v ce(sat) (v) i c collector current (a) 150c v be(sat) v i c i c /i b =10 100c 25c -55c v ce(sat) (v) i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c v be(sat) (v) i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
zxtn25100bfh document number: ds33703 rev. 2 - 2 6 of 7 www.diodes.com december 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25100bfh package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 a m j l d f b c h k g k1 x e y c z
zxtn25100bfh document number: ds33703 rev. 2 - 2 7 of 7 www.diodes.com december 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25100bfh important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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